57:23

Drain Induced Barrier Lowering

59:30

Short Channel Effects

1:09:43

MOS Parameter Extraction from C-V Characteristics

19:08

Transistor - 8 - Sub-Threshold Leakage

59:20

SOI Technology and comparisons with Bulk Silicon CMOS technology

31:38

Transistor- 6 - Velocity Saturation and Level-1 SPICE Model

58:47

Ideal MOS C-V Characteristics

58:48

Channel and Source/Drain Engineering